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Magnetoresistance
Magnetoresistance
Magnetoresistance is the change in electrical resistance of a material when exposed to a magnetic field. This effect arises from the influence of magnetic fields on charge carrier motion. Different forms of magnetoresistance exist, including giant magnetoresistance and tunneling magnetoresistance. These effects have revolutionized data storage technologies. Magnetoresistance plays a central role in magnetic sensors and read heads for hard drives. It also provides insight into spin-dependent transport and electronic structure. Studying magnetoresistance helps link magnetism with electrical conduction. Advances in magnetoresistance continue to support spintronic applications and magnetic sensing technologies.
Committee Members
Thomas F Ramos
Lawrence Livermore National Laboratory, United States
Ephraim Suhir
Portland State University, United States
Alexander Unzicker
Pestalozzi Gymnasium Munchen, Germany GPIC 2026 Speakers
Thomas J Webster
Brown University, United States
Jon H Brasher
Stelleo Scientific Foundation, United States
Jason Liu
West Windsor-Plainsboro High School North, United States
Tom Lawrence
Ronin Institute of Independent Scholarship 2.0, United KingdomSubmit your abstract Today
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