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Magnetoresistance
Magnetoresistance
Magnetoresistance is the change in electrical resistance of a material when exposed to a magnetic field. This effect arises from the influence of magnetic fields on charge carrier motion. Different forms of magnetoresistance exist, including giant magnetoresistance and tunneling magnetoresistance. These effects have revolutionized data storage technologies. Magnetoresistance plays a central role in magnetic sensors and read heads for hard drives. It also provides insight into spin-dependent transport and electronic structure. Studying magnetoresistance helps link magnetism with electrical conduction. Advances in magnetoresistance continue to support spintronic applications and magnetic sensing technologies.
Committee Members
Ephraim Suhir
Portland State University, United States
Alexander Unzicker
Pestalozzi Gymnasium Munchen, Germany
Paulo Cesar De Morais
University of Brasilia, Brazil GPIC 2026 Speakers
Thomas J Webster
Brown University, United States
Jon H Brasher
Stelleo Scientific Foundation, United States
Tom Lawrence
Ronin Institute of Independent Scholarship 2.0, United Kingdom
Wenjie Liu
University of Oxford, United KingdomSubmit your abstract Today
Title : Photoaligned azodye nanolayers: New trends for liquid crystal devices
Vladimir Chigrinov, Hong Kong University of Science and Technology, Hong Kong
Title : Where is modern physics heading? Why constants of nature matter
Alexander Unzicker, Pestalozzi Gymnasium Munchen, Germany
Title : Global photochemical model CHARM-DE of the earth’s atmosphere for altitudes 0-130 km
Alexei Krivolutsky, Central Aerological Observatory (CAO), Russian Federation
Title : Nonlinear plasma wave excitation in cylindrical semiconductor waveguides
Amir Sohail, COMSATS University Islamabad, Pakistan
Title : Characterization of quaternary alloy
Yarub Al Douri, European Academy of Sciences, Belgium
Title : Using physics to eliminate implant infection in over 25000 patients to date
Thomas J Webster, Brown University, United States